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Other articles related with "double gate"：
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58501 |
Zi-Xin Chen(陈子馨), Wei-Jing Liu(刘伟景), Jiang-Nan Liu(刘江南), Qiu-Hui Wang(王秋蕙), Xu-Guo Zhang(章徐国), Jie Xu(许洁), Qing-Hua Li(李清华), Wei Bai(白伟), and Xiao-Dong Tang(唐晓东) |
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DC and analog/RF performance of C-shaped pocket TFET (CSP-TFET) with fully overlapping gate |
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Chin. Phys. B
2022 Vol.31 (5): 58501-058501
[Abstract]
(384)
[HTML 0 KB]
[PDF 1559 KB]
(136)
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47201 |
Shaoyan Di(邸绍岩), Lei Shen(沈磊), Zhiyuan Lun(伦志远), Pengying Chang(常鹏鹰), Kai Zhao(赵凯), Tiao Lu(卢朓), Gang Du(杜刚), Xiaoyan Liu(刘晓彦) |
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Investigation of the surface orientation influence on 10-nm double gate GaSb nMOSFETs |
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Chin. Phys. B
2017 Vol.26 (4): 47201-047201
[Abstract]
(682)
[HTML 1 KB]
[PDF 801 KB]
(265)
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47303 |
Zhang Jian(张健), He Jin(何进), Zhou Xing-Ye(周幸叶), Zhang Li-Ning(张立宁), Ma Yu-Tao(马玉涛), Chen Qin(陈沁), Zhang Xu-Kai(张勖凯), Yang Zhang(杨张), Wang Rui-Fei(王睿斐), HanYu(韩雨), and Chan Mansun(陈文新) |
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A unified charge-based model for SOI MOSFETs applicable from intrinsic to heavily doped channel |
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Chin. Phys. B
2012 Vol.21 (4): 47303-047303
[Abstract]
(1353)
[HTML 1 KB]
[PDF 303 KB]
(717)
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